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Forum: Reliability & Maintainability Questions and Answers

Topic: Reliability & Maintainability Questions and Answers

Topic Posted by: Reliability & Maintainability Forum (src_forum@alionscience.com )
Organization: System Reliability Center
Date Posted: Mon Aug 31 12:47:36 US/Eastern 1998

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Original Message:

Posted by: Ed Takacs (etakacs@aethercomm.com )
Organization:Aethercomm, Inc.
Date posted: Mon Nov 19 18:45:49 US/Eastern 2001
Subject: Power GaAs FET and LDMOS FET failure rate prediction
Message:
I am trying to determine the part reliability rate for LDMOS FETs-operating at L band and 60 Watts per FET (Tchannel<125C)and Power GaAs FETs (operating about 4 Watts) with Tchannel also < 125 C. MIL 217F calculates failure rates much higher than expected-(ie way out, unrealistic) I am looking for guidance-either a study, or manufacturers ap note or anything else- to determine a realistic part failure rate for the LDMOS and Power GaAs FET's. Thanks in advance for your help.


Reply:

Subject: Power GaAs FET and LDMOS FET failure rate prediction
Reply Posted by: Paul Jaworski (pjaworski@alionscience.com )
Organization: RAC
Date Posted: Wed Nov 21 17:16:49 US/Eastern 2001
Message:
Ed Performed an analysis in PRISM, for a GAAS FET in a ground environment, with a duty cycle of 30%. Prism calculated a failure rate of 0.051153 failures/10*6 calendar hours. If you would like to find out about some other parts or variables, free demo of PRISM is available at http://rac.alionscience.com/prism/. Paul Jaworski


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