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Forum: Reliability & Maintainability Questions and Answers

Topic: Reliability & Maintainability Questions and Answers

Topic Posted by: Reliability & Maintainability Forum (src_forum@alionscience.com )
Organization: System Reliability Center
Date Posted: Mon Aug 31 12:47:36 US/Eastern 1998

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Original Message:

Posted by: Paul Hare (phare@pirus.com )
Organization:Pirus Networks
Date posted: Fri Feb 15 11:57:44 US/Eastern 2002
Subject: FRAM and Reliability
Message:
I am thinking about using a Ferroelectric Nonvolatile RAM component (FRAM), but I'm not familiar with the reliability of the technology. Does anyone out there have positive or negative comments that they could give me? The data sheet for the part in question states "A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories." I guess on a system level, it may be more reliable; but as a component, how does it stack up against more standard RAM technologies... Thanks in advance for comments, Paul Hare e: phare@pirus.com Compliance Engineer w: 978.206.9179 Pirus Networks f: 978.206.9199 43 Nagog Park c: 508.450.0376 Acton, MA 01720 i: www.pirus.com


Reply:

Subject: Ferroelectric RAM
Reply Posted by: B. Dudley (bdudley@alionscience.com )
Organization: Reliability Analysis Center
Date Posted: Mon Feb 18 14:22:04 US/Eastern 2002
Message:
Historical experience data from users has not become available to the Reliability Analysis Center, therefore, the expected reliability is an unknown. The FRAM (Ferroelectric Nonvolatile Random Access Memory) device does have two interesting features, that is the ability to rewrite many times with out failure and the capability to store information without a back-up power source. The possible draw backs are the size of the device in bites, that is 256,000, which is less than the million bits available on EEPROMs and use of a new technology, ferroelectric crystals. New technologies often have a long growth pattern before achieving high reliability. EEPROM devices using MOS (metal oxide silicon) technology have a track record of very high reliability and very few failures. To use a new technology that does not have a proven track record and compare it to one with less than 10 failure per billion hours is a significant risk that you will have to consider.


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